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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications: Volume 1155 -

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2012-07-09
49,98 € 83,30 €

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To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address rel ... Täielik kirjeldus

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Kirjeldus

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

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Kirjastaja Cambridge University Press
Väljalaskeaasta 2012
Kaanetüüp Pehme kaanega
EAN 9781107408326
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Te vaatate: CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications: Volume 1155
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49,98 € 83,30 €