Dielectric and Work Function Engineered Doping-Less Tunnel FET: Subthreshold Modeling, Simulation and Analysis - N. B. Balamurugan,G. Lakshmi Priya
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Saadetis 12-18 tööpäeva jooksul
30-päevane tagastamisõigus
The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above lim ... Täielik kirjeldus
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Kirjeldus
The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET¿s (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson¿s equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.
Lisateave
| Autor | N. B. Balamurugan, G. Lakshmi Priya |
|---|---|
| Kirjastaja | LAP LAMBERT Academic Publishing |
| Väljalaskeaasta | 2020 |
| Kaanetüüp | Pehme kaanega |
| EAN | 9786202672030 |