Gate Stack and Silicide Issues in Silicon Processing: Volume 611 -
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As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the ... Täielik kirjeldus
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Kirjeldus
Lisateave
| Kirjastaja | Cambridge University Press |
|---|---|
| Väljalaskeaasta | 2012 |
| Kaanetüüp | Pehme kaanega |
| EAN | 9781107413160 |